Microelectronic devices and methods for manufacturing microelectronic devices

ABSTRACT

Microelectronic devices and methods for manufacturing microelectronic devices are disclosed herein. In one embodiment, a method includes constructing a radiation sensitive component in and/or on a microelectronic device, placing a curable component in and/or on the microelectronic device, and forming a barrier in and/or on the microelectronic device to at least partially inhibit irradiation of the radiation sensitive component. The radiation sensitive component can be doped silicon, chalcogenide, polymeric random access memory, or any other component that is altered when irradiated with one or more specific frequencies of radiation. The curable component can be an adhesive, an underfill layer, an encapsulant, a stand-off, or any other feature constructed of a material that requires curing by irradiation.

TECHNICAL FIELD

The present invention is related to microelectronic devices and methodsfor manufacturing microelectronic devices.

BACKGROUND

Microelectronic devices generally have a die (i.e., a chip) thatincludes integrated circuitry having a high density of very smallcomponents. In a typical process, a large number of dies aremanufactured on a single wafer using many different processes that maybe repeated at various stages (e.g., implanting, doping,photolithography, chemical vapor deposition, physical vapor deposition,plasma enhanced chemical vapor deposition, plating, planarizing,etching, etc.). The dies typically include an array of very smallbond-pads electrically coupled to the integrated circuitry. Thebond-pads are the external electrical contacts on the die through whichthe supply voltage, signals, etc., are transmitted to and from theintegrated circuitry. The wafer is then thinned by backgrinding and thedies are separated from one another (i.e., singulated) by dicing thewafer. After the dies have been singulated, they are typically“packaged” to couple the bond-pads to a larger array of electricalterminals that can be more easily coupled to the various power supplylines, signal lines, and ground lines.

Conventional processes for packaging dies include electrically couplingthe bond-pads on the dies to an array of pins, ball-pads, or other typesof electrical terminals, and then encapsulating the dies to protect themfrom environmental factors (e.g., moisture, particulates, staticelectricity, and physical impact). In one application, the bond-pads areelectrically connected to contacts on an interposer substrate that hasan array of ball-pads. For example, FIG. 1 schematically illustrates aconventional packaged microelectronic device 2 including amicroelectronic die 10, an interposer substrate 20 attached to the die10 with an adhesive 30, a plurality of wire-bonds 32 electricallycoupling the die 10 to the substrate 20, a casing 50 protecting the die10 from environmental factors, and a plurality of solder balls 60attached to the substrate 20. After assembly, the adhesive 30 and thecasing 50 are typically cured to form a robust packaged device 2.

Another type of microelectronic device is a “flip-chip” semiconductordevice. These devices are referred to as “flip-chips” because they aretypically manufactured on a wafer and have an active side with bond-padsthat initially face upward. After manufacture is completed and a die issingulated, the die is inverted or “flipped” such that the active sidebearing the bond-pads faces downward for attachment to an interposersubstrate. The bond-pads are usually coupled to terminals, such asconductive “bumps,” that electrically and mechanically connect the dieto the interposer substrate. The bumps on the flip-chip can be formedfrom solders, conductive polymers, or other materials. In applicationsusing solder bumps, the solder bumps are reflowed to form a solder jointbetween the flip-chip component and the substrate, which leaves a smallgap between the flip-chip and the interposer substrate. To enhance theintegrity of the joint between the microelectronic component and thesubstrate, an underfill material may be introduced into the gap. Theunderfill material bears some of the stress placed on the components andprotects the components from moisture, chemicals, and othercontaminants. After flowing the underfill material into the gap betweenthe flip-chip component and the substrate, the underfill material iscured.

Conventional methods for curing underfill materials, encapsulants,adhesives, and other compounds include either heating the curablematerial with various techniques or irradiating the curable materialwith microwave energy at a fixed frequency. One advantage of irradiatingthe material is that the time required to cure the material is reduced.Curing materials with microwave energy at a fixed frequency, however,has several drawbacks. For example, when microwave energy is applied toa microelectronic substrate, arcing and/or excessive heat accumulationmay occur and cause localized damage to the substrate and the componentto which the substrate is mounted. Arcing results from the build-up of acharge differential between different components or between one or moreof the electronic elements within the components. When the difference inpotential exceeds the resistance of a dielectric medium, such as air,the result is a release of the built-up charge through the dielectricmedium manifested by an arc between the two oppositely chargedcomponents. Moreover, microwave energy may heat certain portions of theconductive circuitry more rapidly than other portions, which may damagethe circuitry.

One existing approach to address such drawbacks of curing materials withfixed-frequency microwave energy is to vary the frequency of the appliedmicrowave energy. Sweeping the frequency prevents the build-up of acharge differential and the excessive accumulation of heat. As a result,variable frequency microwave curing typically avoids arcing and theassociated localized damage to microelectronic components. One problemwith this approach, however, is that applying microwave energy over arange of frequencies may adversely affect other components within themicroelectronic device. For example, doped silicon, polymeric randomaccess memory, and chalcogenide are irreversibly changed when exposed tomicrowave energy at certain frequencies. Specifically, with regard todoped silicon, microwave energy can cause dopant atoms to diffusethroughout a substrate and render the doped structure and other featuresin the substrate defective. As a result, there exists a need to improvethe process of curing materials in microelectronic devices.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 schematically illustrates a conventional packaged microelectronicdevice.

FIG. 2 is a schematic view of a microelectronic device and a system forcuring one or more components of the device in accordance with oneembodiment of the invention.

FIG. 3 is a schematic side cross-sectional view of a microelectronicdevice in accordance with another embodiment of the invention.

FIGS. 4-6 illustrate different configurations of barriers for use withmicroelectronic devices in accordance with several embodiments of theinvention.

FIG. 7 is a schematic side cross-sectional view of a microelectronicdevice in accordance with another embodiment of the invention.

FIG. 8 is a schematic side cross-sectional view of a microelectronicdevice in accordance with another embodiment of the invention.

DETAILED DESCRIPTION

A. Overview

The following disclosure describes several embodiments ofmicroelectronic devices and methods for manufacturing microelectronicdevices. An embodiment of one such method includes constructing aradiation sensitive component in and/or on a microelectronic device,placing a curable component in and/or on the microelectronic device, andforming a barrier in and/or on the microelectronic device to at leastpartially inhibit irradiation of the radiation sensitive component. Theradiation sensitive component can be doped silicon, chalcogenide,polymeric random access memory, or any other component that is alteredwhen irradiated with one or more specific frequencies of radiation. Thecurable component can be an adhesive, an underfill layer, anencapsulant, a stand-off, or any other feature constructed of a materialthat requires curing by irradiation.

In another embodiment, a method includes providing a substrate having aradiation sensitive component and constructing a conductive barrier atthe substrate for at least partially reflecting radiation directedtoward the radiation sensitive component during curing. The conductivebarrier can be formed on an exterior surface of the substrate orinternally within the substrate. Alternatively, the barrier can beformed on and/or in another substrate or member adjacent to the firstsubstrate.

In another embodiment, a method includes (a) constructing amicroelectronic device having a substrate, a radiation sensitivecomponent in and/or on the substrate, a curable component in and/or onthe substrate, and a shield in and/or on the substrate, (b) irradiatingthe microelectronic device at a plurality of frequencies to at leastpartially cure the curable component, and (c) while irradiating thedevice, at least partially reflecting the radiation directed toward theradiation sensitive component with the shield.

Another aspect of the invention is directed to microelectronic devices.In one embodiment, a microelectronic device includes a substrate, aradiation sensitive component at the substrate, a curable component atthe substrate, and a barrier at the substrate. The barrier is configuredto at least partially inhibit irradiation of the radiation sensitivecomponent during curing. For example, the barrier may have a thicknessselected to at least partially reflect the radiation directed toward theradiation sensitive component and may be of sufficient thickness toreflect the incident radiation.

Specific details of several embodiments of the invention are describedbelow with reference to microelectronic devices includingmicroelectronic dies and interposer substrates, but in other embodimentsthe microelectronic devices can include other components. For example,the microelectronic devices can include a microfeature workpiece uponwhich and/or in which micromechanical components, data storage elements,optics, read/write components, or other features are fabricated.Microfeature workpieces can be semiconductor wafers such as silicon orgallium arsenide wafers, glass substrates, insulative substrates, andmany other types of materials. Moreover, the microelectronic devices caninclude a single microelectronic component or an assembly of multiplecomponents. Several details describing well-known structures orprocesses often associated with fabricating microelectronic dies andmicroelectronic devices are not set forth in the following descriptionfor purposes of brevity and clarity. Also, several other embodiments ofthe invention can have different configurations, components, orprocedures than those described in this section. A person of ordinaryskill in the art, therefore, will accordingly understand that theinvention may have other embodiments with additional elements, or theinvention may have other embodiments without several of the elementsshown and described below with reference to FIGS. 2-8.

Where the context permits, singular or plural terms may also include theplural or singular term, respectively. Moreover, unless the word “or” isexpressly limited to mean only a single item exclusive from other itemsin reference to a list of at least two items, then the use of “or” insuch a list is to be interpreted as including (a) any single item in thelist, (b) all of the items in the list, or (c) any combination of theitems in the list. Additionally, the term “comprising” is usedthroughout to mean including at least the recited feature(s) such thatany greater number of the same features and/or types of other featuresand components are not precluded.

B. Embodiments of Microelectronic Devices and Systems for Manufacturingthe Devices

FIG. 2 is a schematic view of a microelectronic device 140 and a system100 for curing one or more components of the device 140 in accordancewith one embodiment of the invention. The illustrated system 100includes a radiation chamber 110, a radiation generator 120 forgenerating electromagnetic radiation in the chamber 110, and a supportmember 130 for carrying the microelectronic device 140 in the chamber110. The illustrated radiation generator 120 generatesvariable-frequency microwave radiation 122 for irradiating themicroelectronic device 140 to cure one or more components in the device140. In several applications, the range of frequencies is betweenapproximately 0.9 GHz and 90 GHz, although in other embodiments therange of frequencies can include frequencies less than 0.9 GHz or morethan 90 GHz. In either case, the range of frequencies is selected basedon the material(s) to be cured because different materials may havedifferent optimal curing frequencies. By varying the frequency, theradiation generator 120 reduces and/or eliminates (a) arcing betweenvarious components of the microelectronic device 140, and (b) excessiveheat accumulation at localized portions of the device 140. In additionalembodiments, however, the radiation generator 120 may generate microwaveradiation at a fixed frequency or other types of electromagneticradiation at a fixed or variable frequency for curing one or morecomponents of the microelectronic device 140.

The support member 130 is configured to support and position themicroelectronic device 140 relative to the radiation generator 120 sothat the device 140 is exposed to the microwave radiation 122. Theillustrated support member 130 has a surface 132 on which themicroelectronic device 140 rests such that the device 140 is exposedwithin the chamber 110. In other embodiments, the support member 130 mayenclose the microelectronic device 140 to inhibit heat from radiatingfrom the edges of the device 140 and maintain a generally uniformtemperature throughout the device 140 during curing. As a result of theuniform temperature, the curable components are expected to curegenerally uniformly throughout the microelectronic device 140. In eithercase, the support member 130 can be composed of quartz, alumina, boronnitride, or other suitable materials for carrying the microelectronicdevice 140 without contaminating the device 140. Suitable supportmembers 130 and systems 100 are manufactured by Lambda Technologies ofMorrisville, N.C.

The illustrated microelectronic device 140 includes a radiationsensitive component 150 (shown schematically), a curable component 160(shown schematically), and a barrier 170 positioned to inhibitirradiation of the radiation sensitive component 150. The radiationsensitive component 150 is a constituent or element of the device 140that can be damaged or otherwise irreversibly affected by exposure tothe microwave radiation 122. The radiation sensitive component 150, forexample, can be doped silicon, chalcogenide, polymeric random accessmemory, or any other component that is irreversibly altered whenirradiated with the radiation 122 generated by the radiation generator120. For example, when a heavily doped structure in a silicon substrateis sufficiently irradiated, the dopant atoms can diffuse throughout thesubstrate and potentially render the doped structure and other featuresin the substrate defective. The curable component 160 is a constituentor element of the device 140 that requires exposure to the microwaveradiation 122 generated by the radiation generator 120 for curing. Thecurable component 160 can be an adhesive, an underfill layer, anencapsulant, a stand-off, or any other feature constructed of a materialthat requires curing by irradiation.

The radiation sensitive component 150 and the curable component 160 canbe formed in and/or on the same substrate, or they can be differentmembers of an assembly. Although the illustrated microelectronic device140 includes a single radiation sensitive component 150 and a singlecurable component 160, in other embodiments, the microelectronic device140 may have multiple radiation sensitive components and/or multiplecurable components. Moreover, in embodiments in which the radiationgenerator 120 irradiates the device 140 with electromagnetic radiationoutside of the microwave range, the radiation sensitive component 150 isirreversibly affected by the particular frequency of radiation generatedby the radiation generator 120 and the curable component 160 is at leastpartially cured by the particular frequency of radiation.

The barrier 170 is a structure formed in and/or on the microelectronicdevice 140 to inhibit irradiation of the radiation sensitive component150 during curing of the curable component 160. As such, the barrier 170reflects and/or absorbs radiation directed toward the radiationsensitive component 150 to prevent the microwave radiation 122 fromdamaging or otherwise irreversibly changing the component 150. Thebarrier 170 can be an external and/or internal structure on the device140 and be composed of a conductive material that is generallyreflective of the microwave radiation 122. For example, suitable barriermaterials include silver, copper, gold, and other conductive materials.In either case, the barrier 170 has a thickness T selected to reflectsufficient microwave radiation 122 such that the radiation 122 does notrender the radiation sensitive component 150 defective. The thickness Tis based on the composition of the barrier material. Specifically,barriers composed of highly conductive materials can be thinner thanbarriers composed of less conductive materials. The barrier 170 can beformed by depositing a layer of material onto the device using plating,electroplating, electroless deposition, chemical vapor deposition,plasma deposition, stenciling, or other suitable processes.

The barrier 170 can be a temporary or permanent structure on themicroelectronic device 140. For example, the barrier 170 can be formedon and/or in the microelectronic device 140 before curing the curablecomponent 160 and subsequently removed via etching, sputtering, or othersuitable processes after curing the component 160. Alternatively, thebarrier 170 may not be removed after curing, but rather can remain onthe microelectronic device 140 throughout at least the remainder of themanufacturing process. As described below with reference to FIG. 5, inseveral embodiments in which the barrier 170 is a permanent structure onthe microelectronic device 140, the barrier 170 can also be a groundplane, or a plurality of electrical traces, or the barrier 170 mayperform another function in the device 140 in addition to reflecting themicrowave radiation 122.

One feature of the microelectronic device 140 illustrated in FIG. 2 isthat the device 140 includes a barrier 170 for inhibiting irradiation ofthe radiation sensitive component 150. An advantage of this feature isthat the curable component 160 can be irradiated with variable-frequencymicrowave radiation to at least partially cure the component 160 withoutexposing the radiation sensitive component 150 to particular frequenciesof microwave radiation that irreversibly alter the component 150.Although the curable component 160 could be irradiated at a fixedmicrowave frequency that may not damage the radiation sensitivecomponent 150, variable-frequency microwave radiation is preferablebecause it reduces and/or eliminates (a) the build-up of a chargedifferential between different components in a microelectronic device,and (b) excess heat accumulation at localized portions of the device.

C. Additional Embodiments of Microelectronic Devices

FIG. 3 is a schematic side cross-sectional view of a microelectronicdevice 240 in accordance with another embodiment of the invention. Theillustrated microelectronic device 240 includes a microelectronic die242 and an interposer substrate 280 carrying the die 242. Themicroelectronic die 242 includes an integrated circuit 244 (shownschematically in broken lines), a doped region 250 within the integratedcircuit 244, an active side 246, a backside 248 opposite the active side246, a plurality of terminals 252 (e.g., bond-pads) arranged in an arrayon the active side 246, and a plurality of traces 254 electricallycoupling the terminals 252 to the integrated circuit 244. The dopedregion 250 of the integrated circuit 244 is a radiation sensitivecomponent in the illustrated die 242. As such, if the doped region 250were exposed to the microwave radiation 122 (FIG. 2), the doped region250 could be irreversibly altered. For example, the microwave radiation122 may heat the doped region 250 such that the dopant atoms diffusethroughout the integrated circuit 244 and render the die 242 and theintegrated circuit 244 defective. In other embodiments, the die 242 caninclude other radiation sensitive components in lieu of or in additionto the doped region 250.

The interposer substrate 280 can be a printed circuit board or othersupport member for carrying the die 242. In the illustrated embodiment,the interposer substrate 280 includes a first side 282 with a pluralityof first contacts 286 and a second side 284 with a plurality of pads288. The first contacts 286 can be arranged in an array for electricalconnection to corresponding terminals 252 on the die 242. The pads 288can be arranged in arrays to receive a plurality of electrical couplers(e.g., solder balls) to connect the interposer substrate 280 to anexternal device. The interposer substrate 280 further includes aplurality of conductive traces 289 electrically coupling the contacts286 to corresponding pads 288.

The illustrated microelectronic device 240 further includes (a) anadhesive 260 coupling the backside 248 of the die 242 to the first side282 of the interposer substrate 280, and (b) a barrier 270 disposed onthe active side 246 of the die 242. The adhesive 260 can be an adhesivefilm, epoxy, tape, paste, or other suitable material for bonding the die242 to the interposer substrate 280. In the illustrated embodiment, theadhesive 260 is a curable component that is cured via exposure to themicrowave radiation 122 (FIG. 2) generated by the radiation generator120 (FIG. 2). The barrier 270 is configured to shield the doped region250 from irradiation during the curing process. Specifically, thebarrier 270 is sized and positioned to reflect the microwave radiation122 directed toward the doped region 250 and inhibit the radiation 122from impinging upon the doped region 250. The barrier 270 is alsoconfigured to minimize the reflection of microwave radiation directedtoward the adhesive 260 so that the radiation generator 120 canirradiate and cure the adhesive 260. For example, in the illustratedembodiment, the microwave radiation 122 can diffract around the barrier270 such that the radiation 122 irradiates the section of the adhesive260 below the doped region 250 but does not irradiate the doped region250. In other similar embodiments, the entire strip of adhesive 260 maynot be irradiated depending on the thickness of the die 242, the sizeand position of the barrier 270, the position of the radiation generator120, and other factors.

D. Additional Embodiments of Barriers for Microelectronic Devices

FIGS. 4-6 illustrate different configurations of barriers for use withmicroelectronic devices in accordance with several embodiments of theinvention. For example, FIG. 4 is a schematic isometric view of amicroelectronic device 340 including a microelectronic die 242 and abarrier 370 encasing a portion of the die 242. The illustrated die 242is generally similar to the die 242 described above with reference toFIG. 3. For example, the die 242 includes an active side 246, a backside248 opposite the active side 246, and a plurality of ends 249(illustrated individually as 249 a-c) extending between the active side246 and backside 248. The illustrated barrier 370 covers a portion ofthe active side 246, a portion of a first end 249 a, a portion of asecond end 249 b, and a fourth end (not shown) of the die 242.

FIG. 5 is a schematic isometric view of a microelectronic device 440including a barrier 470 covering only a portion of the active side 246of the die 242. The size and position of the barrier 470 are selected toinhibit irradiation of a radiation sensitive component(s) in the die 242without unnecessarily reflecting radiation directed toward a curablecomponent(s) in or proximate to the die 242.

FIG. 6 is a schematic isometric view of a microelectronic device 540including a plurality of barrier members 570 (identified individually as570 a-d) on the die 242. The individual barrier members 570 are sizedand configured to inhibit irradiation of the radiation sensitivecomponent(s) within the die 242. The illustrated barrier members 570 arespaced apart to minimize the reflection of radiation directed toward thecurable component(s). Although the illustrated embodiment includes fourbarrier members 570, in other embodiments, a different number of barriermembers can be formed on the die 242.

E. Additional Embodiments of Microelectronic Devices

FIG. 7 is a schematic side cross-sectional view of a microelectronicdevice 640 in accordance with another embodiment of the invention. Themicroelectronic device 640 is generally similar to the microelectronicdevice 240 described above with reference to FIG. 3. For example, themicroelectronic device 640 includes a microelectronic die 642 attachedto an interposer substrate 280. The illustrated microelectronic die 642,however, includes an integrated circuit 644 (shown schematically inbroken lines), a doped region 250 (shown schematically) in theintegrated circuit 644, and a barrier 670 in the integrated circuit 644.In the illustrated embodiment, the barrier 670 performs severalfunctions. For example, the barrier 670 can be a ground plane, one ormore traces, or another conductive structure in the integrated circuit644 such that the barrier 670 both (a) reflects radiation directedtoward the doped region 250, and (b) carries signals or provides aground line within the integrated circuit 644. As a result, thethickness of the barrier 670 must be sufficient to perform bothrequirements. In other embodiments, the barrier 670 may be positioned inthe integrated circuit 644 but serve no purpose other than shielding thedoped region 250 from radiation. In additional embodiments, the barrier670 may be formed in the die 642 but not be part of the integratedcircuit 644.

FIG. 8 is a schematic side cross-sectional view of a microelectronicdevice 740 in accordance with another embodiment of the invention. Themicroelectronic device 740 includes a substrate 742, a contact pad 744on the substrate 742, a doped region 750 (identified as 750 a-b) overthe contact pad 744, and a barrier 770 shielding the doped region 750.The illustrated doped region 750 includes a first doped material 750 aon the contact pad 744 and a second doped material 750 b stacked on thefirst doped material 750 a. The first and second doped materials 750 a-bare different materials separated by a diffusion zone 751. The barrier770 is positioned over the first and second doped materials 750 a-b toreflect and/or block radiation directed toward the doped materials 750a-b. Accordingly, the barrier 770 inhibits radiation from irreversiblyaltering the doped region 750, such as causing the dopant atoms in thefirst doped material 750 a to diffuse across the diffusion zone 751 andinto the second doped material 750 b. In other embodiments, additionallayers of doped material may be included in the doped region 750.

From the foregoing, it will be appreciated that specific embodiments ofthe invention have been described herein for purposes of illustration,but that various modifications may be made without deviating from thespirit and scope of the invention. For example, many of the elements ofone embodiment can be combined with other embodiments in addition to orin lieu of the elements of the other embodiments. Accordingly, theinvention is not limited except as by the appended claims.

We claim:
 1. A method for manufacturing a microelectronic device, themethod comprising: constructing an integrated circuit having a radiationsensitive component in and/or on a semiconductor substrate of amicroelectronic device, wherein the radiation sensitive component isdamaged by radiation in a selected bandwidth; forming a barrier inand/or on the semiconductor substrate of the microelectronic device at alocation aligned with the radiation sensitive component such that thebarrier at least partially inhibits radiation in the selected bandwidthfrom irradiating the radiation sensitive component; placing a radiationcurable material in and/or on the microelectronic device such that theradiation curable material is aligned with the radiation sensitivecomponent; and curing the radiation curable material using radiation atthe selected bandwidth.
 2. The method of claim 1 wherein forming thebarrier comprises constructing a conductive structure in and/or on thesemiconductor substrate of the microelectronic device, and wherein themethod further comprises: irradiating the radiation curable materialwith microwave radiation at a plurality of different frequencies to atleast partially cure the radiation curable material; and whileirradiating the radiation curable material, at least partially blockingthe microwave radiation directed toward the radiation sensitivecomponent with the barrier.
 3. The method of claim 1, wherein theselected bandwidth includes a plurality of frequencies.
 4. The method ofclaim 1 wherein forming the barrier comprises coating a section of thesemiconductor substrate with a conductive material.
 5. The method ofclaim 1 wherein forming the barrier comprises depositing conductivematerial onto an exterior surface of the microelectronic device.
 6. Themethod of claim 1 wherein forming the barrier comprises constructing aconductive structure in the semiconductor substrate.
 7. The method ofclaim 1 wherein forming the barrier comprises constructing a groundplane in the semiconductor substrate.
 8. The method of claim 1 whereinforming the barrier comprises constructing a plurality of traces in thesemiconductor substrate.
 9. The method of claim 1, wherein the radiationsensitive component is not damaged when the radiation curable materialis cured using radiation at the selected bandwidth.
 10. The method ofclaim 1, wherein forming the barrier comprises depositing a layer ofmaterial onto the device using plating, electroplating, electrolessdeposition, chemical vapor deposition, plasma deposition, stenciling ora combination thereof; and wherein the material includes silver, gold,aluminum, copper, or a combination thereof.
 11. A method formanufacturing a microelectronic device, the method comprising:constructing an integrated circuit having a radiation sensitivecomponent in and/or on a semiconductor substrate of a microelectronicdevice, wherein the radiation sensitive component is damaged byradiation in a selected bandwidth; forming a barrier in and/or on thesemiconductor substrate of the microelectronic device at a locationaligned with the radiation sensitive component such that the barrier atleast partially inhibits radiation in the selected bandwidth fromirradiating the radiation sensitive component; placing a radiationcurable material in and/or on the microelectronic device such that theradiation curable material is aligned with the radiation sensitivecomponent; curing the radiation curable material using radiation at theselected bandwidth; and determining a minimum thickness of a barriermaterial to at least partially reflect radiation.
 12. A method formanufacturing a microelectronic device, the method comprising:constructing a radiation sensitive component in and/or on amicroelectronic device; placing a radiation curable material in and/oron the microelectronic device such that the radiation curable materialcovers the radiation sensitive component wherein the radiation used tocure the radiation curable material affects the radiation sensitivecomponent; forming a barrier in and/or on the microelectronic devicealigned with the radiation sensitive component such that the barrier atleast partially inhibits irradiation of the radiation sensitivecomponent; irradiating the radiation curable material to at leastpartially cure the radiation curable material; and at least partiallyremoving the barrier after irradiating the radiation curable material.13. A method for manufacturing a microelectronic device, the methodcomprising: providing a semiconductor die having a semiconductorsubstrate including a radiation sensitive component at a predeterminedlocation of the semiconductor die, wherein the radiation sensitivecomponent is irreversibly altered when irradiated at a selectedbandwidth; constructing a conductive barrier on and/or in thesemiconductor substrate aligned with the predetermined location of theradiation sensitive component, wherein the conductive barrier at leastpartially blocks radiation in the selected bandwidth; and curing aradiation curable material on at least a portion of the semiconductordie by exposing the semiconductor die to radiation in the selectedbandwidth.
 14. The method of claim 13 wherein providing thesemiconductor die comprises disposing the radiation curable material inand/or on the semiconductor substrate.
 15. The method of claim 13wherein the selected bandwidth includes one or more frequenciesassociated with microwave radiation.
 16. The method of claim 13 whereinconstructing the conductive barrier comprises depositing a conductivematerial onto an exterior surface of the substrate using a plating,electroplating, electroless deposition, chemical vapor deposition,plasma deposition, stenciling process or a combination thereof; andwherein the material includes silver, gold, aluminum, copper, or acombination thereof.
 17. The method of claim 13 wherein constructing theconductive barrier comprises constructing a conductive structure in thesemiconductor substrate.
 18. A method for manufacturing amicroelectronic device, the method comprising: providing amicroelectronic device having an integrated circuit that includesincluding a semiconductor substrate and a radiation sensitive componentformed on and/or in the semiconductor substrate, wherein the radiationsensitive component is damaged by radiation in a selected bandwidth;forming a barrier in and/or on the semiconductor substrate of themicroelectronic device at a location aligned with the radiationsensitive component such that the barrier at least partially inhibitsradiation in the selected bandwidth from irradiating the radiationsensitive component; placing a radiation curable material in and/or onthe microelectronic device such that the radiation curable material isaligned with the radiation sensitive component; and directing radiationin the selected bandwidth toward the microelectronic device to irradiatea section of the microelectronic device.
 19. The method of claim 18wherein providing the microelectronic device comprises: constructing theradiation sensitive component on and/or in the semiconductor substrate.20. The method of claim 18 wherein: providing the microelectronic devicecomprises constructing the radiation sensitive component on and/or inthe semiconductor substrate; and directing radiation in the selectedbandwidth toward the microelectronic device comprises at least partiallycuring the radiation curable material in and/or on the substrate. 21.The method of claim 18 wherein directing radiation in the selectedbandwidth toward the microelectronic device comprises at least partiallyreflecting the radiation directed toward the radiation sensitivecomponent with the barrier.
 22. The method of claim 18 wherein theselected bandwidth comprises microwave radiation.
 23. The method ofclaim 18 wherein the selected bandwidth includes a plurality offrequencies.
 24. The method of claim 18, wherein providing themicroelectronic device comprises depositing a conductive material ontoan exterior surface of the device using a plating, electroplating,electroless deposition, chemical vapor deposition, plasma deposition,stenciling process or a combination thereof to form the barrier; andwherein the conductive material includes silver, gold, aluminum, copper,or a combination thereof.
 25. The method of claim 18 wherein providingthe microelectronic device comprises: building the radiation sensitivecomponent in and/or on the semiconductor substrate; and constructing aconductive structure in the substrate to form the barrier.
 26. Themethod of claim 18, further comprising removing at least a portion ofthe barrier after irradiating the section of the microelectronic device.27. The method of claim 18 wherein: providing the microelectronic devicecomprises constructing the radiation sensitive component in and/or onthe semiconductor substrate; and directing radiation in the selectedbandwidth toward the microelectronic device comprises sweeping aradiation curable material in and/or on the substrate with at least onerange of frequencies without damaging the radiation sensitive component.28. A method for manufacturing a microelectronic device, the methodcomprising: constructing a microelectronic device including a substrate,a radiation sensitive component in and/or on the substrate, and aradiation curable material in and/or on the substrate, wherein theradiation sensitive component is damaged by radiation in a selectedbandwidth; forming a shield in and/or on the substrate aligned with theradiation sensitive component such that the shield at least partiallyinhibits irradiation of the radiation sensitive component; irradiatingthe microelectronic device with radiation in the selected bandwidth toat least partially cure the radiation curable material; and whileirradiating the device, at least partially reflecting the radiationdirected toward the radiation sensitive component with the shield. 29.The method of claim 28 wherein forming the shield comprises coating asection of the semiconductor substrate with a conductive material. 30.The method of claim 28 wherein irradiating the microelectronic devicecomprises directing microwave radiation toward the microelectronicdevice.
 31. The method of claim 28, wherein forming the shield comprisesdepositing a conductive material onto an exterior surface of thesubstrate using a plating, electroplating, electroless deposition,chemical vapor deposition, plasma deposition, stenciling process or acombination thereof; and wherein the conductive material includessilver, gold, aluminum, copper, or a combination thereof.
 32. The methodof claim 28 wherein forming the shield comprises forming a conductivestructure in the substrate.
 33. The method of claim 28, furthercomprising removing at least a portion of the shield after irradiatingthe microelectronic device.